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AN822
Vishay Siliconix
105
130
Spreading Copper (s q . in.)
120
Spreading Copper (s q . in.)
95
110
8 5
75
100
90
8 0
65
100 %
70
50 %
100 %
55
50 %
60
0 %
0 %
45
50
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Figure 5. Spreading Copper - Si7401DN
CONCLUSIONS
As a derivative of the PowerPAK SO-8, the PowerPAK
1212-8 uses the same packaging technology and has
been shown to have the same level of thermal perfor-
mance while having a footprint that is more than 40 %
smaller than the standard TSSOP-8.
Recommended PowerPAK 1212-8 land patterns are
provided to aid in PC board layout for designs using this
new package.
www.vishay.com
4
Figure 6. Spreading Copper - Junction-to-Ambient Performance
The PowerPAK 1212-8 combines small size with attrac-
tive thermal characteristics. By minimizing the thermal
rise above the board temperature, PowerPAK simplifies
thermal design considerations, allows the device to run
cooler, keeps r DS(ON) low, and permits the device to
handle more current than a same- or larger-size MOS-
FET die in the standard TSSOP-8 or SO-8 packages.
Document Number 71681
03-Mar-06
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相关PDF资料
SIS452DN-T1-GE3 MOSFET N-CH D-S 12V 1212-8 PPAK
SIS456DN-T1-GE3 MOSFET N-CH 30V 1212-8 PPAK
SIS468DN-T1-GE3 MOSF N CH 80V 30A 1212-8 PWR PK
SIS892ADN-T1-GE3 MOSFET N-CH 100V D-S PPAK 1212
SIS902DN-T1-GE3 MOSFET N-CH D-S 75V 1212-8 PPAK
SISA10DN-T1-GE3 MOSFET N-CH 30V 30A 1212-8
SIZ700DT-T1-GE3 MOSFET N-CH D-S 20V PPAK 1212-8
SIZ710DT-T1-GE3 MOSFET N-CH D-S 20V POWERPAIR
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